Type CEP9060N CEB9060N CEF9060N
VDSS 55V 55V 55V
RDS(ON) 10.5mΩ 10.5mΩ 10.5mΩ
ID 90A
90A 90A e
@VGS 10V 10V 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for through hole. D
G
D
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S.
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CEP9060N/CEB9060N CEF9060N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP9060N CEB9060N CEF9060N VDSS 55V 55V 55V RDS(ON) 10.5mΩ 10.5mΩ 10.5mΩ ID 90...
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CEB9060N CEF9060N VDSS 55V 55V 55V RDS(ON) 10.5mΩ 10.5mΩ 10.5mΩ ID 90A 90A 90A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for through hole.