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CEP9060R - N-Channel MOSFET

Datasheet Summary

Features

  • Type CEP9060R CEB9060R CEF9060R VDSS 55V 55V 55V RDS(ON) 10.5mΩ 10.5mΩ 10.5mΩ ID 100A 100A 100A e @VGS 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for through hole. D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEP9060R
Manufacturer CET
File Size 101.54 KB
Description N-Channel MOSFET
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CEP9060R/CEB9060R CEF9060R N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP9060R CEB9060R CEF9060R VDSS 55V 55V 55V RDS(ON) 10.5mΩ 10.5mΩ 10.5mΩ ID 100A 100A 100A e @VGS 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for through hole. D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 TO-220F VDS VGS ID IDM PD EAS IAS TJ,Tstg f Units V V 55 ±20 100 300 200 1.3 480 50 -55 to 175 100 300 75 0.
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