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CEP9060N - N-Channel MOSFET

Key Features

  • Type CEP9060N CEB9060N CEF9060N VDSS 55V 55V 55V RDS(ON) 10.5mΩ 10.5mΩ 10.5mΩ ID 90A 90A 90A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for through hole. D G D GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEP9060N
Manufacturer CET
File Size 377.04 KB
Description N-Channel MOSFET
Datasheet download datasheet CEP9060N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEP9060N/CEB9060N CEF9060N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP9060N CEB9060N CEF9060N VDSS 55V 55V 55V RDS(ON) 10.5mΩ 10.5mΩ 10.5mΩ ID 90A 90A 90A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for through hole.