CEP9060N
CEP9060N is N-Channel MOSFET manufactured by CET.
FEATURES
Type CEP9060N CEB9060N CEF9060N
VDSS 55V 55V 55V
RDS(ON) 10.5mΩ 10.5mΩ 10.5mΩ
ID 90A
90A 90A e
@VGS 10V 10V 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for through hole.
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
D S CEF SERIES
TO-220F
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit TO-220/263 TO-220F
VDS 55
VGS ±20
ID 90 90 e
IDM f
360 360 e
166 49 PD 1.11 0.33
EAS IAS TJ,Tstg
325 325 50 50
-55 to 175
Units
V V A A W W/ C m J A C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC...