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CET3301 Datasheet Preview

CET3301 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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CET3301 pdf
CET3301
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -7.3A, RDS(ON) = 35m@VGS = -10V.
RDS(ON) = 53m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
SOT-223 package.
D
DS
D
G
SOT-223
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID -7.3
IDM -29
Maximum Power Dissipation
PD 3
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
42
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 2. 2011.Feb
http://www.cetsemi.com



CET
CET

CET3301 Datasheet Preview

CET3301 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CET3301 pdf
CET3301
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Symbol
Test Condition
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = -250µA
VGS = -10V, ID = -7A
VGS = -4.5V, ID = -5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = -15V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -15V, ID = -5.3A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = -2.4A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
-30
-1
Typ Max Units
-1
100
-100
V
µA
nA
nA
-3 V
28 35 m
40 53 m
1130
220
180
pF
pF
pF
14 28 ns
6 12 ns
40 80 ns
10 20 ns
24 31 nC
3 nC
7 nC
-2.4 A
-1.2 V
2


Part Number CET3301
Description P-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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