Datasheet4U Logo Datasheet4U.com

CEU6659 - Dual-Channel MOSFET

Features

  • 60V , 9A , RDS(ON) = 72mΩ @VGS = 10V. RDS(ON) = 90mΩ @VGS = 5V. -60V , -6A , RDS(ON) = 125mΩ @VGS = 10V. RDS(ON) = 150mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). G1 High power and current handing capability. Lead-free plating ; RoHS compliant. TO-252-4L package. S1 G1 S2 G2 D1/D2 CEU SERIES TO-252-4L D1/D2 G2 S1 S2.

📥 Download Datasheet

Datasheet Details

Part number CEU6659
Manufacturer CET
File Size 578.32 KB
Description Dual-Channel MOSFET
Datasheet download datasheet CEU6659 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CEU603AL N-Channel MOSFET Chino-Excel Technology
CEU61A3 N-Channel MOSFET Chino-Excel Technology
CEU630N N-Channel MOSFET Chino-Excel Technology
CEU680J Disc Ceramic Capacitors Mallory
CEU01N65 N-Channel MOSFET Chino-Excel Technology

Other Datasheets by CET

Part Number Description
CEU6601 P-Channel MOSFET
CEU6030L N-Channel MOSFET
CEU6031L N-Channel MOSFET
CEU6042 N-Channel MOSFET
CEU6056 N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
CEU6659 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 60V , 9A , RDS(ON) = 72mΩ @VGS = 10V. RDS(ON) = 90mΩ @VGS = 5V. -60V , -6A , RDS(ON) = 125mΩ @VGS = 10V. RDS(ON) = 150mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). G1 High power and current handing capability. Lead-free plating ; RoHS compliant. TO-252-4L package. S1 G1 S2 G2 D1/D2 CEU SERIES TO-252-4L D1/D2 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous e Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS 60 60 VGS ±20 ±20 ID d 9 -6 IDM 32 -24 10.4 PD 0.
Published: |