12N65F Datasheet | CHONGQING PINGYANG

FEATURE - 12A,650V,RDS(ON)=0.7Ω@VGS=10V/6A - Low gate charge - Low Ciss - Fast switching - 100% avalanche tested - Improved dv/dt capability TO-220AB 12N65 ITO-220AB 12N65F TO-263 12N65B TO-262 12N65H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode d V/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds VDSS VGSS ID IDM EAS IAR EAR dv/dt TJ,TSTG Mounting Torque 6-32 or M3 screw 12N65 600 ±30 12 48 320 12 33 5.5 -55 to +150 10 1.1 UNIT A m J A m J V/ns ℃ ℃ lbf- in N- m Thermal Characteristics Parameter Maximum Junction-to-Case Maximum Power Dissipation TC=25℃ Symbol Rth JC...