900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






CHONGQING PINGYANG

12N65F Datasheet Preview

12N65F Datasheet

N-CHANNEL MOSFET

No Preview Available !

12N65(F,B,H)
12A mps,650 Volts N-CHANNEL MOSFET
FEATURE
12A,650V,RDS(ON)=0.7Ω@VGS=10V/6A
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-220AB
12N65
ITO-220AB
12N65F
TO-263
12N65B
TO-262
12N65H
Absolute Maximum Ratings(TC=25,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
12N65
600
±30
12
48
320
12
33
5.5
-55 to +150
260
10
1.1
UNIT
V
A
mJ
A
mJ
V/ns
lbf·in
N·m
Thermal Characteristics
Parameter
Maximum Junction-to-Case
Maximum Power Dissipation
TC=25
Symbol
RthJC
PD
ITO-220
1.0
125
- 页码 -
TO-220
0.8
155
TO-262
TO-263
0.8
155
Units
/W
W
Rev. 14-1
http:// www.perfectway.cn




CHONGQING PINGYANG

12N65F Datasheet Preview

12N65F Datasheet

N-CHANNEL MOSFET

No Preview Available !

Electrical Characteristics (Tc=25,unless otherwise noted)
Parameter
Symbol
Test Conditions
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=250uA
Breakdown Temperature Coefficient
ΔBVDSS Reference to 25℃,
/ΔTJ ID=250uA
Zero Gate Voltage Drain Current
IDSS VDS=650V,VGS=0V
Gate-Body Leakage Current,Forward
IGSSF
VGS=30V,VDS=0V
Gate-Body Leakage Current,Reverse
IGSSR
VGS=-30V,VDS=0V
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
VDS=10V,ID=250uA
Drain-Source On-State Resistance
RDS(on)
VGS=10V,ID=6A
Dynamic Characteristics
Input Capacitance
Ciss VDS=25V,VGS=0V,
Output Capacitance
Coss f=1.0MHZ
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-On Delay Time
td(on) VDD=300V,ID=12A,
Turn-On Rise Time
tr RG=4.7Ω (Note4,5)
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg VDS=480V,ID=12A,
Gate-Source Charge
Qgs VGS=10V, (Note4,5)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD IS=12A,VGS=0V
Reverse Recovery Time
trr VGS=0V,IS=12A,
Reverse Recovery Charge
Qrr dIF/dt=100A/us, (Note4)
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. VDD=50V,starling,L=12mH,Rg=25Ω,IAS=12A , TJ=25.
3. ISDID,dI/dt=_A/us,VDDBVDSS,starting TJ=25.
4. Pulse width≤300us;duty cycle≤2%.
5. Repetitive rating; pulse width limited by maximum junction temperature.
Mix Typ Max Units
650
V
0.6 V/
- - 1 uA
- - 100 nA
- - -100 nA
24
- - 0.7
V
Ω
- - 1730 pF
- - 180 pF
- - 90 pF
20
ns
28
ns
55
ns
30
ns
58 nC
14 nC
32 nC
- - 12
- - 48
- - 1.5
600
43
A
A
V
ns
uC
- 页码 -
Rev. 14-1
http:// www.perfectway.cn


Part Number 12N65F
Description N-CHANNEL MOSFET
Maker CHONGQING PINGYANG
PDF Download

12N65F Datasheet PDF






Similar Datasheet

1 12N65 N-Channel Power MOSFET
nELL
2 12N65 N-CHANNEL MOSFET
CHONGQING PINGYANG
3 12N65 N-Channel MOSFET Transistor
Inchange Semiconductor
4 12N65 N-Channel MOSFET
HAOHAI
5 12N65 N-CHANNEL POWER MOSFET
Unisonic Technologies
6 12N65 650V N Channel Power MOSFET
JINAN JINGHENG
7 12N65A N-Channel Power MOSFET
nELL
8 12N65AF N-Channel Power MOSFET
nELL
9 12N65B N-CHANNEL MOSFET
CHONGQING PINGYANG





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy