12N65
Description
The UTC 12N65 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply.
Key Features
- RDS(ON) < 0.85Ω @ VGS = 10V, ID = 6.0A * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
- SYMBOL Power MOSFET Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 7
