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12N65 - N-CHANNEL POWER MOSFET

General Description

The UTC 12N65 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology.

These devices are suited for high efficiency switch mode power supply.

Key Features

  • RDS(ON) < 0.85Ω @ VGS = 10V, ID = 6.0A.
  • Ultra low gate charge ( typical 42 nC ).
  • Low reverse transfer capacitance ( CRSS = typical 25 pF ).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2017 Unisonic Technologies Co. , Ltd 1 of 7 QW-R502-583.E 12N65.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 12N65 12A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode, the advanced technology has been especially tailored.  FEATURES * RDS(ON) < 0.85Ω @ VGS = 10V, ID = 6.