12N60K-MT
DESCRIPTION
The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode the advanced technology has been especially tailored.
1 TO-220
1 TO-220F
1 TO-220F1
1 TO-220F2
- FEATURES
- RDS(ON) ≤ 0.70Ω @ VGS=10V, ID=6.0A
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
1 TO-220F3
- SYMBOL
- ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N60KL-TA3-T
12N60KG-TA3-T
12N60KL-TF3-T
12N60KG-TF3-T
12N60KL-TF1-T
12N60KG-TF1-T
12N60KL-TF2-T
12N60KG-TF2-T
12N60KL-TF3T-T
12N60KG-TF3T-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3
Pin Assignment 123...