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12N65K-MT - N-CHANNEL POWER MOSFET

Description

The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology.

These devices are suited for high efficiency switch mode power supply.

Features

  • RDS(ON) < 0.75 Ω @ VGS = 10 V, ID = 6 A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

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Datasheet preview – 12N65K-MT

Datasheet Details

Part number 12N65K-MT
Manufacturer Unisonic Technologies
File Size 202.23 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 12N65K-MT Datasheet
Additional preview pages of the 12N65K-MT datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Preliminary 12A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode, the advanced technology has been especially tailored.  FEATURES * RDS(ON) < 0.
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