12N65H - N-CHANNEL MOSFET

Download the 12N65H datasheet PDF. This datasheet also covers the 12N65 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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12N65H n-channel mosfet by CHONGQING PINGYANG - Datasheet Preview — Note: The manufacturer provides a single datasheet file (12N65-CHONGQINGPINGYANG.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	12N65H
Manufacturer	CHONGQING PINGYANG
File Size	188.34 KB
Description	N-CHANNEL MOSFET
Datasheet	12N65H Datasheet

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More Datasheets from CHONGQING PINGYANG

Part Number	Description
12N65	N-CHANNEL MOSFET
12N65B	N-CHANNEL MOSFET
12N65F	N-CHANNEL MOSFET
12N60	N-CHANNEL MOSFET
12N60B	N-CHANNEL MOSFET
12N60F	N-CHANNEL MOSFET
12N60H	N-CHANNEL MOSFET
12N10P	N-CHANNEL MOSFET

Full PDF Text Transcription for 12N65H (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 12N65H. For precise diagrams, tables, and layout, please refer to the original PDF.

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12N65(F,B,H) 12A mps,650 Volts N-CHANNEL MOSFET FEATURE  12A,650V,RDS(ON)=0.7Ω@VGS=10V/6A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 12N65 ITO-220AB 12N65F TO-263 12N65B TO-262 12N65H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds VDSS VGSS ID IDM EAS IAR EAR dv/dt TJ,TSTG TL Mounting Torque 6-32 or M3 screw 12N65 600 ±30 12 48 320 12 33 5.