12N60H
FEATURE
- 12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A
- Low gate charge
- Low Ciss
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
TO-220AB 12N60
ITO-220AB 12N60F
TO-263 12N60B
TO-262 12N60H
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode d V/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds
VDSS VGSS
ID IDM EAS IAR EAR dv/dt TJ,TSTG
Mounting Torque
6-32 or M3 screw
12N60 600 ±30 12 48 320 12 33 5.5
-55 to +150
10 1.1
UNIT
A m J A m J V/ns ℃
℃ lbf- in N- m
Thermal Characteristics
Parameter
Maximum Junction-to-Case Maximum Power Dissipation
TC=25℃
Symbol
Rth JC...
