12N60
Key Features
- 12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A
- Low gate charge
- Low Ciss
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: 12N60
- Description: N-CHANNEL MOSFET
- Category: MOSFET
- Manufacturer: CHONGQING PINGYANG
- Size: 187.69 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 12N60C | IXYS | IGBT |
| 12N65 | JINAN JINGHENG | 650V N Channel Power MOSFET |
| 12N65-ML | Unisonic Technologies | N-CHANNEL POWER MOSFET |