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CHONGQING PINGYANG

8N10P Datasheet Preview

8N10P Datasheet

N-CHANNEL MOSFET

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8N10P
8 Amps,100 Volts N-CHANNEL Power MOSFET
FEATURE
8A,100V,RDS(ON)MAX=23mΩVGS=10V/8A
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
APPLICATION
High Frequency Piont-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
LCD/LED back light
GENERAL DESCRIPTION
SOP8L PIN CONFIGURATION
The 8N10P is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and
gate charge for most of the synchronous buck converter applications.
The 8N10P meet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings(TC=25,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Channel Temperature
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
IAS
dv/dt
TJ,TSTG
TCH
TL
8N10P
100
±20
8
32
11
15
5.5
-55 to +150
150
260
UNIT
V
A
mJ
A
V/ns
Thermal Characteristics
Parameter
Thermal resistance , Channel to Case
Thermal resistance , Channel to Ambient
Maximum Power Dissipation
TC=25
Symbol
Rth(ch-c)
Rth(ch-a)
PD
MAX
16
59
3.1
Units
/W
/W
W




CHONGQING PINGYANG

8N10P Datasheet Preview

8N10P Datasheet

N-CHANNEL MOSFET

No Preview Available !

Electrical Characteristics (Tc=25,unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Temperature Coefficient
Zero Gate Voltage Drain Current
BVDSS
ΔBVDSS
/ΔTJ
IDSS
IDSS
VGS=0V,ID=250uA
Reference to 25℃,
ID=250uA
VDS=100VGS=0V
VDS=100VGS=0VTJ =55℃)
100
Gate-Body Leakage Current,Forward
IGSS VGS=±20VDS=0V
On Characteristics
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(on)
VDS=10V,ID=250uA
VGS=10V,ID=8A
1.0
Dynamic Characteristics
Input Capacitance
Ciss VDS=50V,VGS=0V,
Output Capacitance
Coss f=1.0MHZ
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-On Delay Time
td(on)
VDD=50V,
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
tf
R L =6.25Ω,
R GEN =3Ω
VGS=10V (Note4,5)
Total Gate Charge
Qg VDS=50V,ID=8A,
Gate-Source Charge
Qgs VGS=10V, (Note4,5)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS VG = VD= 0V, Force Current
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD IS=10A,VGS=0V
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. VDD=25V,L=0.1mH,Rg=25Ω,IAS=13A , starling TJ=25.
3. ISDID,dI/dt=200A/us,VDDBVDSS,starting TJ=25℃,Pulse width≤300us;duty cycle≤2%.
4. Repetitive rating; pulse width limited by maximum junction temperature.
Typ
0.06
18.5
1190
95
7
7
3
20
3
16
4.5
2.5
Max Units
V
V/
1
5
±100
μA
μA
nA
3.0 V
23 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
8A
32 A
1.0 V


Part Number 8N10P
Description N-CHANNEL MOSFET
Maker CHONGQING PINGYANG
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8N10P Datasheet PDF






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