Pb Free Terminal Plating
G
S S S
D D D
D
S1 S2 S3 G4
D
8D 7D 6D 5D.
RoHS Compliant.
Halogen Free
QFN 5mm x 6mm Plastic Package
Top View
Product Summary
VDS Qg Qgd
RDS(on)
Vth
25 13.3 3.5 VGS=4.5V VGS=10V 1.6
2.5 1.8
V nC nC mΩ mΩ V
Maximum Values (TA=25oC unless otherwise stated)
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID Continu.
Full PDF Text Transcription for CSD16407Q5 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
CSD16407Q5. For precise diagrams, and layout, please refer to the original PDF.
N-Channel CICLON NexFET™ Power MOSFETs CSD16407Q5 Features • Ultra Low Qg & Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating G S S S D D D D S1 S...
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ance • Avalanche Rated • Pb Free Terminal Plating G S S S D D D D S1 S2 S3 G4 D 8D 7D 6D 5D • RoHS Compliant • Halogen Free QFN 5mm x 6mm Plastic Package Top View Product Summary VDS Qg Qgd RDS(on) Vth 25 13.3 3.5 VGS=4.5V VGS=10V 1.6 2.5 1.8 V nC nC mΩ mΩ V Maximum Values (TA=25oC unless otherwise stated) Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C Continuous Drain Current1 IDM Pulsed Drain Current, TA = 25°C2 PD Power Dissipation1 TJ, TSTG Operating Junction and Storage Temperature Range EAS Avalanche Energy, single pulse ID =66A, L = 0.1mH, RG = 25Ω 1. R
CSD16407Q5 Datasheet
