Pb Free Terminal Plating
G S S S
D D D D
S1 S2 S3 G4
D
8D 7D 6D 5D.
RoHS Compliant.
Halogen Free
QFN 3.3mm x 3.3mm Plastic Package Top View
Product Summary
VDS Qg Qgd
RDS(on)
Vth
25 4.0 1.0 VGS=4.5V VGS=10V 2.0
9.5 6.2
V nC nC mΩ mΩ V
Maximum Values (TA=25oC unless otherwise stated)
Symbol
VDS
Drain to Source Voltage
Parameter
VGS Gate to Source Voltage
Continuou.
Full PDF Text Transcription for CSD16409Q3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
CSD16409Q3. For precise diagrams, and layout, please refer to the original PDF.
N-Channel CICLON NexFET™ Power MOSFETs CSD16409Q3 Features • Ultra Low Qg & Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating G S S S D D D D S1 S...
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ance • Avalanche Rated • Pb Free Terminal Plating G S S S D D D D S1 S2 S3 G4 D 8D 7D 6D 5D • RoHS Compliant • Halogen Free QFN 3.3mm x 3.3mm Plastic Package Top View Product Summary VDS Qg Qgd RDS(on) Vth 25 4.0 1.0 VGS=4.5V VGS=10V 2.0 9.5 6.2 V nC nC mΩ mΩ V Maximum Values (TA=25oC unless otherwise stated) Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Continuous Drain Current, TC = 25°C ID Continuous Drain Current1 IDM PD TJ, TSTG EAS Pulsed Drain Current, TA = 25°C2 Power Dissipation1 Operating Junction and Storage Temperature Range Avalanche Energy, single pulse ID =38A, L = 0.
CSD16409Q3 Datasheet
