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COMSET

BTB04 Datasheet Preview

BTB04 Datasheet

SENSITIVE GATE TRIACS

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SEMICONDUCTORS
BTA04 Series
BTB04 Series
SENSITIVE GATE TRIACS
FEATURE
The BTA04-BTB04 series are high performance glass
passivated triacs PNPN devices.
They are in a plastic TO220 package.
These parts are suitable for general purpose
applications where gate high sensitivity is required.
Application on 4Q such as phase control and static
switching.
Compliance to RoHS.
A2
A1
G
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
BTA04/BTB04
400 600 700
T-D-S-A T-D-S-A T-D-S-A
VDRM
VRRM
IT(RMS)
ITSM
I2t
dl/dt
Tstg
Tj
Tl
Repetitive peak off-
state voltage
Repetitive peak
Tj= 110 °C
reverse voltage
RMS on-state current
BTA TC=90°C
BTB TC=95°C
Non-repetitive peak tp= 8.3 ms
on-state current
I2t value
tp= 10 ms
tp= 10 ms
Critical rate of rise of
on-state current
Gate supply:
Repetitive
F= 50 Hz
IG= 50 mA
dlG/dt= 0.1 A/µs
No repetitive
Storage temperature range
Operating junction temperature
Maximum lead soldering temperature
during 10s at 4.5 mm from case
400 600 700
400 600 700
4
42
40
8
10
50
-40 to +150
-40 to +110
260
06/01/2014
COMSET SEMICONDUCTORS
Unit
V
A
A
A2s
A/µs
°C
°C
°C
1|3




COMSET

BTB04 Datasheet Preview

BTB04 Datasheet

SENSITIVE GATE TRIACS

No Preview Available !

SEMICONDUCTORS
BTA04 Series
BTB04 Series
THERMAL CHARACTERISTICS
Symbol
Ratings
Rj-c
Thermal resistance junction to case
BTA
BTB
Rj-a Thermal resistance junction to ambient
Value
4.4
3.2
60
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test
Condition(s)
Quadrant
Repetitive
IDRM
peak
off-state
VDRM Tj=25 °C
rated
all
current
Tj=110 °C
IRRM
Repetitive
peak reverse
current
VDRM Tj=25 °C
rated Tj=110 °C
all
IGT
Gate trigger
current
VD = 12 V
RL = 33
VGT
Gate trigger
voltage
VD = 12 V
RL = 33
I – II – III
IV
all
VGD
Tj = 110 °C
VD = VDRM
RL = 3.3 K
IH
Holding current
IT = 100 mA
Gate open
all
all
BTA04 – BTB04
TDSA
Max.
Max.
Max. 5
5
0.01
0.75
0.01
0.75
5 10
10 10
10
25
Max.
1.5
Min. 0.2
Max. 15 15 25 25
Unit
mA
mA
mA
V
V
mA
IL
VTM
On-state
voltage
tgt
dV/dt
(dl/dt)c
Linear slope
IG= 1.2IGT
IT = 5.5 A
VD= VDRM
IG= 40 mA
dlG/dt= 0.5 A/µs
VD= 67% VDRM
Gate open
Tj=110 °C
(dl/dt)c =1.8 A/ms
Tj=110 °C
I – III – IV
II
all
all
all
all
Typ. 10
20
Max.
10 20
20 40
1.65
20
40
mA
V
Typ. 2
µs
Typ. 10 10 - - V/µs
Min. - - 10 10
Typ. 1 1 5 5 V/µs
06/01/2014
COMSET SEMICONDUCTORS
2|3


Part Number BTB04
Description SENSITIVE GATE TRIACS
Maker COMSET
Total Page 3 Pages
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