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C450UT170 - LED

Description

P-N Junction Area (μm) Chip Top Area (μm) Chip Thickness (μm) Chip Bottom Area (μm) Au Bond Pad Diameter (μm) Bonding Area Diameter (μm) Note 5 Au Bond Pad Thickness (μm) Backside Contact Metal Area (μm) CxxxUT170-Sxxxx-31 Dimension Tolerance 140 x 140 ± 25 170 x 170 ± 25 50 ± 10 130 x 130

Features

  • Small Chip.
  • 170 x 170 x 50 μm.
  • Single Wire Bond Structure.
  • UT LED Performance.
  • 450 nm.
  • 12+ mW.
  • 460 nm.
  • 10+ mW.
  • 470 nm.
  • 10+ mW.
  • 527 nm.
  • 4+ mW.
  • Low Forward Voltage.
  • 2.9 V Typical at 5 mA.
  • 2kV Class 2 ESD Rating.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Cree® UltraThin® Gen 3 LEDs Data Sheet CxxxUT170-Sxxxx-31 Cree’s UltraThin® LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications, as well as the ability to withstand 2000 V ESD. Applications include consumer products, mobile devices and automotive applications where a small, thin form factor is required. FEATURES • Small Chip – 170 x 170 x 50 μm • Single Wire Bond Structure • UT LED Performance – 450 nm – 12+ mW – 460 nm – 10+ mW – 470 nm – 10+ mW – 527 nm – 4+ mW • Low Forward Voltage – 2.
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