Datasheet Details
| Part number | CG2H40010 |
|---|---|
| Manufacturer | Cree (now Wolfspeed) |
| File Size | 2.30 MB |
| Description | RF Power GaN HEMT |
| Download | CG2H40010 Download (PDF) |
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| Part number | CG2H40010 |
|---|---|
| Manufacturer | Cree (now Wolfspeed) |
| File Size | 2.30 MB |
| Description | RF Power GaN HEMT |
| Download | CG2H40010 Download (PDF) |
|
|
|
CG2H40010 10 W, DC - 6 GHz, RF Power GaN HEMT Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40010 ideal for linear and compressed amplifier circuits.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
CG2H40010 | RF Power GaN HEMT | MACOM |
| Part Number | Description |
|---|---|
| CG2H40025 | RF Power GaN HEMT |
| CG2H40045 | RF Power GaN HEMT |