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CG2H40010 - RF Power GaN HEMT

Datasheet Summary

Description

The CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Features

  • Up to 8 GHz Operation.
  • 18 dB Small Signal Gain at 2.0 GHz.
  • 16 dB Small Signal Gain at 4.0 GHz.
  • 17 W typical PSAT.
  • 70% Efficiency at PSAT.
  • 28 V Operation.

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Datasheet Details

Part number CG2H40010
Manufacturer MACOM
File Size 942.02 KB
Description RF Power GaN HEMT
Datasheet download datasheet CG2H40010 Datasheet
Additional preview pages of the CG2H40010 datasheet.

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CG2H40010 10 W, DC - 8 GHz, RF Power GaN HEMT Description The CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40010 ideal for linear and compressed amplifier circuits. The transistor is available in both screw-down, flange and solderdown, pill packages. Package Types: 440196, & 440166 PNs: CG2H40010P & CG2H40010F Features • Up to 8 GHz Operation • 18 dB Small Signal Gain at 2.0 GHz • 16 dB Small Signal Gain at 4.
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