Datasheet Details
| Part number | CG2H40010 |
|---|---|
| Manufacturer | Cree (now Wolfspeed) |
| File Size | 2.30 MB |
| Description | RF Power GaN HEMT |
| Datasheet | CG2H40010-CREE.pdf |
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Overview: CG2H40010 10 W, DC - 6 GHz, RF Power GaN HEMT Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40010 ideal for linear and pressed amplifier circuits. The transistor is available in both screwdown, flange and solder-down, pill packages.
| Part number | CG2H40010 |
|---|---|
| Manufacturer | Cree (now Wolfspeed) |
| File Size | 2.30 MB |
| Description | RF Power GaN HEMT |
| Datasheet | CG2H40010-CREE.pdf |
|
|
|
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
CG2H40010 | RF Power GaN HEMT | MACOM |
| Part Number | Description |
|---|---|
| CG2H40025 | RF Power GaN HEMT |
| CG2H40045 | RF Power GaN HEMT |