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CG2H40010 - RF Power GaN HEMT

Datasheet Summary

Features

  • Up to 8 GHz Operation.
  • 18 dB Small Signal Gain at 2.0 GHz.
  • 16 dB Small Signal Gain at 4.0 GHz.
  • 17 W typical PSAT.
  • 70 % Efficiency at PSAT.
  • 28 V Operation.

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Datasheet preview – CG2H40010

Datasheet Details

Part number CG2H40010
Manufacturer CREE
File Size 2.30 MB
Description RF Power GaN HEMT
Datasheet download datasheet CG2H40010 Datasheet
Additional preview pages of the CG2H40010 datasheet.

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Full PDF Text Transcription

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CG2H40010 10 W, DC - 6 GHz, RF Power GaN HEMT Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40010 ideal for linear and compressed amplifier circuits. The transistor is available in both screwdown, flange and solder-down, pill packages. PPNa’sc:kCaGge2HT4yp0e0s1:04F4&01C6G62, H&4404001109P6 FEATURES • Up to 8 GHz Operation • 18 dB Small Signal Gain at 2.0 GHz • 16 dB Small Signal Gain at 4.
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