CG2H40010
CG2H40010 is RF Power GaN HEMT manufactured by Cree.
10 W, DC
- 6 GHz, RF Power GaN HEMT
Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40010 ideal for linear and pressed amplifier circuits. The transistor is available in both screwdown, flange and solder-down, pill packages.
PPNa’sc:kCaGge2HT4yp0e0s1:04F4&01C6G62, H&4404001109P6
Features
- Up to 8 GHz Operation
- 18 dB Small Signal Gain at 2.0 GHz
- 16 dB Small Signal Gain at 4.0 GHz
- 17 W typical...
