CG2H40010 Overview
CG2H40010 10 W, DC - 6 GHz, RF Power GaN HEMT Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40010 ideal for linear and pressed amplifier...
CG2H40010 Key Features
- Up to 8 GHz Operation
- 18 dB Small Signal Gain at 2.0 GHz
- 16 dB Small Signal Gain at 4.0 GHz
- 17 W typical PSAT
- 70 % Efficiency at PSAT
- 28 V Operation
CG2H40010 Applications
- Up to 8 GHz Operation
