Datasheet Details
| Part number | CGHV96100F2 |
|---|---|
| Manufacturer | Cree (now Wolfspeed) |
| File Size | 761.47 KB |
| Description | Input/Output Matched GaN HEMT / Power Amplifer |
| Datasheet |
 CGHV96100F2 Datasheet
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| Part number | CGHV96100F2 |
|---|---|
| Manufacturer | Cree (now Wolfspeed) |
| File Size | 761.47 KB |
| Description | Input/Output Matched GaN HEMT / Power Amplifer |
| Datasheet |
CGHV96100F2 Datasheet
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CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates.
This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies.
GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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CGHV96100F2 | GaN Amplifier | MACOM |
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CGHV96100F2 | GaN HEMT | Wolfspeed |
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