| Part Number | CGHV96100F2 |
|---|---|
| Manufacturer | Cree |
| Overview |
RES, 47 OHM +/-1%, 1/16 W, 0603, SMD CAP, 1.6 pF +/-0.05 pF, 0603, ATC 600L CAP, 1.0 pF +/-0.05 pF, 0603, ATC 600L CAP, 10 pF +/-5%, 0603, ATC CAP, 470 pF +/-5%, 100 V, 0603 CAP, 33,000 pF, 0805, 100 .
Applications
* 8.4 - 9.6 GHz Operation * 145 W POUT typical * 10 dB Power Gain * 45 % Typical PAE 2012 Rev 1.0 * May * Marine Radar * Weather Monitoring * Air Traffic Control * Maritime Vessel Traffic Control * Port Security * 50 Ohm Internally Matched * <0.3 dB Power Droop Subject t. |
CGHV96100F2 Datasheet
The CGHV96100F2 is a Input/Output Matched GaN HEMT / Power Amplifer.
| Part Number | CGHV96100F2 |
|---|---|
| Description | GaN Amplifier |
| Manufacturer | MACOM Technology Solutions |
| Overview |
The CGHV96100F2 is a gallium nitride (GaN) amplifier. This GaN amplifier offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or.
* 8.4 - 9.6 GHz Operation * 145 W POUT typical * 10 dB Power Gain * 40% Typical PAE * 50 Ohm Internally Matched * <0.3 dB Power Droop Applications * Marine Radar * Weather Monitoring * Air Traffic Control * Maritime Vessel Traffic Control * Port Security Large Signal Models Available for ADS and M. |
| Part Number | CGHV96100F2 |
|---|---|
| Description | GaN HEMT |
| Manufacturer | Wolfspeed |
| Overview |
Wolfspeed’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added effic.
* 8.4 - 9.6 GHz Operation * 145 W POUT typical * 10 dB Power Gain * 40% Typical PAE * 50 Ohm Internally Matched * <0.3 dB Power Droop Applications * Marine Radar * Weather Monitoring * Air Traffic Control * Maritime Vessel Traffic Control * Port Security Large Signal Models Available for ADS and M. |