Datasheet Details
| Part number | CGHV96100F2 |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 1.68 MB |
| Description | GaN HEMT |
| Datasheet | CGHV96100F2-Wolfspeed.pdf |
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Overview: CGHV96100F2 100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN.
| Part number | CGHV96100F2 |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 1.68 MB |
| Description | GaN HEMT |
| Datasheet | CGHV96100F2-Wolfspeed.pdf |
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|
|
Wolfspeed’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates.
This GaN Internally Matched (IM) FET offers excellent power added efficiency in parison to other technologies.
GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
CGHV96100F2 | GaN Amplifier | MACOM |
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CGHV96100F2 | Input/Output Matched GaN HEMT / Power Amplifer | CREE |
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