Overview: CGHV96100F2
100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier
Cree’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in parison to other technologies. GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths pared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
PN: CGHV96 100F2 Package Type : 440210 Typical Performance Over 8.4-9.6 GHz
Parameter Linear Gain Output Power Power Gain Power Added Efficiency 8.4 GHz 12.7 151 10.8 44 (TC = 25˚C) 8.8 GHz 12.4 147 10.6 42 9.0 GHz 12.7 150
.DataSheet.co.kr 9.2 GHz 13.1 152 10.7 43 9.4 GHz 13.1 140 10.5 45 9.6 GHz 12.4 131 10.2 45 Units dB W dB % 10.7 44 Note: Measured in CGHV96100F2-TB (838179) under 100 µS pulse width, 10% duty, Pin 41.0 dBm (7.
