CMPA1D1E025F - Power Amplifier

CREE

The CMPA1D1E025F by CREE is a Power Amplifier. Below is the official datasheet preview.

📥 Download Datasheet

CMPA1D1E025F Power Amplifier by CREE - Datasheet Preview — Official preview page of the **CMPA1D1E025F** Power Amplifier datasheet (CREE).

Datasheet Details

Part number	CMPA1D1E025F
Manufacturer	CREE
File Size	1.72 MB
Description	Power Amplifier
Datasheet	CMPA1D1E025F-CREE.pdf
Additional preview pages of the CMPA1D1E025F datasheet.

CMPA1D1E025F Product details

Description

Cree’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process.

Features

24 dB Small Signal Gain.
40 W Typical Pulsed PSAT Operation up to 40 V.
20 W linear power under OQPSK.
Class A/B high gain, high efficiency 50 ohm MMIC Ku Band high power amplifier.

📁 CMPA1D1E025F Similar Datasheet

CMPA1D1E030D - Power Amplifier (Wolfspeed)
CMPA1D1J001S - 1W GaN HPA (MACOM)
CMPA1C1D060D - Power Amplifier (MACOM)
CMPA0060002D - GaN HEMT MMIC Power Amplifier (Wolfspeed)
CMPA0060025D - Power Amplifier (MACOM)
CMPA0530002S - GaN MMIC (MACOM)
CMPA0560008S - 10W GaN HPA (MACOM)
CMPA2060035D - Power Amplifier (MACOM)

Other Datasheets by CREE

CMPA1D1E080F - Power Amplifier
CMPA0060002F - GaN MMIC Power Amplifier
CMPA0060025F - GaN MMIC Power Amplifier
CMPA0527005F - GaN HEMT
CMPA2560025F - GaN MMIC Power Amplifier
CMPA5259025F - GaN MMIC

Published: Nov 3, 2019 |