Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Units
Drain-source Voltage
Gate-source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature1
Screw Torque
VDSS
VGS
PDISS
TSTG
TJ
IGMAX
TS
τ
84
-10, +2
94
-55, +150
225
10
245
40
VDC
VDC
W
˚C
˚C
mA
˚C
in-oz
Thermal Resistance, Junction to Case
RθJC 1.5 ˚C/W
Case Operating Temperature
TC -40, +85 ˚C
Note:
1 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp
25˚C
25˚C
Conditions
25˚C
PDISS = 94 W, 85˚C
CW, PDISS = 94 W
Electrical Characteristics (Frequency = 13.75 GHz to 14.5 GHz unless otherwise stated; TC = 25˚C)
Characteristics
DC Characteristics1
Gate Threshold
Gate Quiscent Voltage
Saturated Drain Current2
Drain-Source Breakdown Voltage
RF Characteristics3
Small Signal Gain
Input Return Loss
Output Return Loss
Symbol
VGS(TH)
VQ
IDS
VBD
S21
S11
S22
Output Mismatch Stress
VSWR
Notes:
1 Measured on-wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in the CMPA1D1E025F-AMP
Min.
-3.8
–
14.6
84
20.9
–
–
–
Typ.
-3.0
-2.7
16.4
100
Max.
-2.3
–
–
–
Units Conditions
V VDS = 10 V, ID = 18.2 mA
V VDS = 40 V, ID = 240 mA
A VDS = 6.0 V, VGS = 2.0 V
V VGS = -8 V, ID = 18.2 mA
24 – dB VDD = 40 V, IDQ = 240 mA, PIN = -15 dBm
-7 -6 dB VDD = 40 V, IDQ = 240 mA, PIN = -15 dBm
-7 -6 dB VDD = 40 V, IDQ = 240 mA, PIN = -15 dBm
– 5:1 Y No damage at all phase angles, VDD = 40 V, IDQ = 240 mA,
POUT = 41 dBm OQPSK
Copyright © 2014-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
2 CMPA1D1E025F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Fax: +1.919.869.2733
www.cree.com/RF
