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CREE

CMPA1D1E025F Datasheet Preview

CMPA1D1E025F Datasheet

Power Amplifier

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CMPA1D1E025F
25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier
Cree’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon
carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The Ku
Band 25W MMIC is targeted for commercial Ku Band satellite communications
applications. It offers high gain and superior efficiency while meets OQPSK
linearity required for Satcom applications at 3dB backed off Psat operations.
This Ku Band MMIC is available in a 10 lead, 25 mm x 9.9 mm metal/ceramic
flanged package.
PaPcNk:aCgMe TPyAp1eD:414E0022153F
Typical Performance Over 13.75-14.5 GHz (TC = 25˚C)
Parameter
13.75 GHz
Small Signal Gain
24
Linear Output Power
24
Power Gain
21
Power Added Efficiency
22
14.0 GHz
24.5
23
21
20
14.25 GHz
24.5
21
20
18
14.5 GHz
24
20
20
18
Note1: Measured at -30 dBc, 1.6 MHz from carrier, in the CMPA1D1E025F-AMP under OQPSK modulation, 1.6 Msps, PN23, Alpha
Filter = 0.2.
Units
dB
W
dB
%
Features
Applications
24 dB Small Signal Gain
40 W Typical Pulsed PSAT
Operation up to 40 V
20 W linear power under OQPSK
Class A/B high gain, high efficiency 50 ohm MMIC Ku
Band high power amplifier
Satellite Communications Uplink
Subject to change without notice.
www.cree.com/rf
1




CREE

CMPA1D1E025F Datasheet Preview

CMPA1D1E025F Datasheet

Power Amplifier

No Preview Available !

Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Units
Drain-source Voltage
Gate-source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature1
Screw Torque
VDSS
VGS
PDISS
TSTG
TJ
IGMAX
TS
τ
84
-10, +2
94
-55, +150
225
10
245
40
VDC
VDC
W
˚C
˚C
mA
˚C
in-oz
Thermal Resistance, Junction to Case
RθJC 1.5 ˚C/W
Case Operating Temperature
TC -40, +85 ˚C
Note:
1 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp
25˚C
25˚C
Conditions
25˚C
PDISS = 94 W, 85˚C
CW, PDISS = 94 W
Electrical Characteristics (Frequency = 13.75 GHz to 14.5 GHz unless otherwise stated; TC = 25˚C)
Characteristics
DC Characteristics1
Gate Threshold
Gate Quiscent Voltage
Saturated Drain Current2
Drain-Source Breakdown Voltage
RF Characteristics3
Small Signal Gain
Input Return Loss
Output Return Loss
Symbol
VGS(TH)
VQ
IDS
VBD
S21
S11
S22
Output Mismatch Stress
VSWR
Notes:
1 Measured on-wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in the CMPA1D1E025F-AMP
Min.
-3.8
14.6
84
20.9
Typ.
-3.0
-2.7
16.4
100
Max.
-2.3
Units Conditions
V VDS = 10 V, ID = 18.2 mA
V VDS = 40 V, ID = 240 mA
A VDS = 6.0 V, VGS = 2.0 V
V VGS = -8 V, ID = 18.2 mA
24 – dB VDD = 40 V, IDQ = 240 mA, PIN = -15 dBm
-7 -6 dB VDD = 40 V, IDQ = 240 mA, PIN = -15 dBm
-7 -6 dB VDD = 40 V, IDQ = 240 mA, PIN = -15 dBm
– 5:1 Y No damage at all phase angles, VDD = 40 V, IDQ = 240 mA,
POUT = 41 dBm OQPSK
Copyright © 2014-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
2 CMPA1D1E025F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Fax: +1.919.869.2733
www.cree.com/RF


Part Number CMPA1D1E025F
Description Power Amplifier
Maker CREE
Total Page 19 Pages
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