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CMPA1D1E025F Datasheet - CREE

CMPA1D1E025F Power Amplifier

Cree’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The Ku Band 25W MMIC is targeted for commercial Ku Band satellite commun.

CMPA1D1E025F Features

* 24 dB Small Signal Gain

* 40 W Typical Pulsed PSAT Operation up to 40 V

* 20 W linear power under OQPSK

* Class A/B high gain, high efficiency 50 ohm MMIC Ku Band high power amplifier Applications

* Satellite Communication Uplink Rev 2.1

CMPA1D1E025F-CREE.pdf