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CMPA1D1E025F - Power Amplifier

General Description

Wolfspeed’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process.

Key Features

  • 24 dB Small Signal Gain.
  • 40 W Typical Pulsed PSAT.
  • Operation up to 40 V.
  • 20 W linear power under OQPSK.
  • Class A/B high gain, high efficiency 50 ohm MMIC Ku-Band high power amplifier.

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Full PDF Text Transcription (Reference)

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CMPA1D1E025F 25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier Description Wolfspeed’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The Ku-Band 25W MMIC is targeted for commercial Ku-Band satellite communications applications. It offers high gain and superior efficiency while meeting OQPSK linearity required for Satcom applications at 3dB backed off PSAT operations. This Ku-Band MMIC is available in a 10 lead, 25 mm x 9.9 mm metal/ceramic flanged package. PN: CMPA1D1E025F Package Type: 440213 Typical Performance Over 13.75-14.