CMPA1D1E025F Datasheet | Cree

25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier Description Cree’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The Ku Band 25W MMIC is targeted for mercial Ku Band satellite munications applications. It offers high gain and superior efficiency while meets OQPSK linearity required for Sat applications at 3dB backed off Psat operations. This Ku Band MMIC is available in a 10 lead, 25 mm x 9.9 mm metal/ceramic flanged package. PN: CMPA1D1E025F Package Type:440213 Typical...