CMPA1D1E025F Overview
Cree’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The Ku Band 25W MMIC is targeted for mercial Ku Band satellite munications applications. It offers high gain and superior efficiency while meets OQPSK linearity required for Sat applications...
CMPA1D1E025F Key Features
- 24 dB Small Signal Gain
- 20 W linear power under OQPSK
- Class A/B high gain, high efficiency
