Datasheet Details
| Part number | CMPA1D1E025F |
|---|---|
| Manufacturer | CREE |
| File Size | 1.72 MB |
| Description | Power Amplifier |
| Datasheet |
 CMPA1D1E025F Datasheet
|
|
|
| Part number | CMPA1D1E025F |
|---|---|
| Manufacturer | CREE |
| File Size | 1.72 MB |
| Description | Power Amplifier |
| Datasheet |
CMPA1D1E025F Datasheet
|
|
|
|
Cree’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process.
📁 Similar Datasheet