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CMPA1D1E025F - Power Amplifier

Datasheet Summary

Description

Cree’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process.

Features

  • 24 dB Small Signal Gain.
  • 40 W Typical Pulsed PSAT Operation up to 40 V.
  • 20 W linear power under OQPSK.
  • Class A/B high gain, high efficiency 50 ohm MMIC Ku Band high power amplifier.

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Datasheet Details

Part number CMPA1D1E025F
Manufacturer CREE
File Size 1.72 MB
Description Power Amplifier
Datasheet download datasheet CMPA1D1E025F Datasheet
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CMPA1D1E025F 25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier Description Cree’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The Ku Band 25W MMIC is targeted for commercial Ku Band satellite communications applications. It offers high gain and superior efficiency while meets OQPSK linearity required for Satcom applications at 3dB backed off Psat operations. This Ku Band MMIC is available in a 10 lead, 25 mm x 9.9 mm metal/ceramic flanged package. PN: CMPA1D1E025F Package Type:440213 Typical Performance Over 13.75-14.5 GHz (TC = 25˚C) Parameter Small Signal Gain 13.75 GHz 24 14.0 GHz 24.
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