CMPA5259050F Description
CMPA5259050F 50 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers Cree’s CMPA5259050F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259050F ideal for 5.2 - 5.9 GHz Radar amplifier applications. The transistor is supplied in a 0.5 inch square ceramic/metal flange package. 100 μsec...
CMPA5259050F Key Features
- 30 dB Small Signal Gain
- 50% Efficiency at PSAT
- Operation up to 28 V
- High Breakdown Voltage
- 0.5 inch-square package