Wolfspeed’s CMPA5259050S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
Key Features
>50% Typical Power Added Efficiency.
27 dB Small Signal Gain.
65 W Typical PSAT.
Operation up to 28 V.
High Breakdown Voltage.
High Temperature Operation
Note: Features are typical performance across frequency under 25°C operation. Please reference performance charts for additional details.
Full PDF Text Transcription for CMPA5259050S (Reference)
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CMPA5259050S 50 W, 5.0 - 5.9 GHz, GaN MMIC, Power Amplifier Description Wolfspeed’s CMPA5259050S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based...
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a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This MMIC contains a two-stage reactively matched amplifier design approach enabling high power and power added efficiency to be achieved in a 5 mm x 5 mm surface mount (QFN package). Typical Performance Over 5.0 - 5.9 GHz (TC = 25ºC) Parameter Small Signal Gain1,2 Output Power1,3 Power Gain1,3 Power Added Efficiency1,3 Note: 1 VDD = 28 V, IDQ = 500 mA 2 Measured at PIN = -20 dBm 3 Measured at PIN = 25 dBm and 150μs; Duty Cycle = 20% 5.2 GHz 27.0 48.2 23.2 56 5.5 GHz 26.0 48.1 23.