The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
CMPA5259050F
50 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers
Cree’s CMPA5259050F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259050F ideal for 5.2 - 5.9 GHz Radar amplifier applications. The transistor is supplied in a 0.5 inch square ceramic/metal flange package.
PacPkNa:geCMTyPpAe5:245490025109F
Typical Performance Over 5.2-5.9 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
5.2 GHz
5.5 GHz
5.9 GHz
Small Signal Gain
31.4
30.8
31.0
Output Power
59.6
56.0
55.2
Efficiency
51.5
50.1
51.4
Input Return Loss
-12.5
-12.0
-7.0
Note: 100 μsec Pulse Width, 10% Duty Cycle, PIN= 26 dBm
Units dB W % dB
Rev 0.
CMPA5259050F Datasheet
