Overview: CMPA5585030F
30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier
Cree’s CMPA5585030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance. PaPckNa:gCeMTPyApe5:548450023103F Typical Performance Over 5.8-8.4 GHz (TC = 25˚C) Parameter 5.8 GHz 6.4 GHz S211,2 25.9 23.8 Power Gain,2,5 22.3 19.0 PAE1,2,4,5 24.7 20.7 ACLR1,2,3,5 -37 -42 Notes (unless otherwise specified): 1. At 25˚C 2. Measurements are performed using Cree test fixture AD-938516 3. Under OQPSK modulated signal, 1.6 Msps, PN23, Alpha Filter = 0.2 4. Power Added Efficiency = (POUT - PIN) / PDC 5. Measured at POUT = 41 dBm 7.2 GHz 26.5 20.9 20.3 -33 7.9 GHz 24.5 21.6 22.6 -34 8.4 GHz 26.7 21.2 22.
