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CMPA5585030F - Power Amplifier

Datasheet Summary

Description

Wolfspeed’s CMPA5585030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

Features

  • 25 dB Small Signal Gain.
  • 30 W Typical PSAT.
  • Operation up to 28 V.
  • High Breakdown Voltage.
  • High Temperature Operation.
  • Size 1.00 x 0.385 inches.

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Datasheet Details

Part number CMPA5585030F
Manufacturer Wolfspeed
File Size 2.19 MB
Description Power Amplifier
Datasheet download datasheet CMPA5585030F Datasheet
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CMPA5585030F 30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Description Wolfspeed’s CMPA5585030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance. Package Type: 440213 PN: CMPA5585030F Typical Performance Over 5.8 - 8.4 GHz (TC = 25ºC) Parameter S211,2 Power Gain2,5 PAE1,2,4,5 ACLR1,2,3,5 5.8 GHz 25.9 22.3 24.7 -37 6.4 GHz 23.
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