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CMPA5585030F 30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Description Wolfspeed’s CMPA5585030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based...
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a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance. Package Type: 440213 PN: CMPA5585030F Typical Performance Over 5.8 - 8.4 GHz (TC = 25ºC) Parameter S211,2 Power Gain2
CMPA5585030F Datasheet
