The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
CMPA5585030F
30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier
Cree’s CMPA5585030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance.
PaPckNa:gCeMTPyApe5:548450023103F
Typical Performance Over 5.8-8.4 GHz (TC = 25˚C)
Parameter
5.8 GHz
6.4 GHz
S211,2
25.9
23.8
Power Gain,2,5
22.3
19.0
PAE1,2,4,5
24.7
20.
CMPA5585030F Datasheet
