CMPA5585030F Overview
CMPA5585030F 30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power...
