Full PDF Text Transcription for E3M0120090D (Reference)
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E3M0120090D. For precise diagrams, and layout, please refer to the original PDF.
VDS 900 V E3M0120090D Silicon Carbide Power MOSFET E-Series Automotive ID @ 25˚C 23 A RDS(on) 120 mΩ N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSF...
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N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Automotive Qualified (AEC-Q101) and PPAP Capable Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency Applications • Automotive EV battery chargers • Renewable energy • High voltage DC/DC converters Part Number E3M0120090D Package TO-247-3 Marking E3M0120090 Maximum Ratings (TC = 25 ˚C
E3M0120090D Datasheet
