E3M0120090J Description
E3M0120090J Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode.
E3M0120090J Key Features
- 3rd generation of SiC MOSFET technology
- High blocking voltage with low on-resistance
- High speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant
- Wide creepage (~7 mm) between drain and source
- Automotive qualified (AEC-Q101) and PPAP capable