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E3M0120090J - Silicon Carbide Power MOSFET

Key Features

  • 3rd generation of SiC MOSFET technology.
  • High blocking voltage with low on-resistance.
  • High speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant.
  • Wide creepage (~7 mm) between drain and source.
  • Automotive qualified (AEC-Q101) and PPAP capable Drain (TAB) TO-263-7 Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Package Types: TO-263-7 PN’s: E3M0.

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E3M0120090J Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features • 3rd generation of SiC MOSFET technology • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7 mm) between drain and source • Automotive qualified (AEC-Q101) and PPAP capable Drain (TAB) TO-263-7 Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Package Types: TO-263-7 PN’s: E3M0120090J Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc.