Datasheet4U.com

E3M0120090J Datasheet Silicon Carbide Power MOSFET

Manufacturer: Wolfspeed

Overview: E3M0120090J Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement.

E3M0120090J datasheet preview

Datasheet Details

Part number	E3M0120090J
Manufacturer	Wolfspeed
File Size	961.15 KB
Description	Silicon Carbide Power MOSFET
Datasheet	E3M0120090J-Wolfspeed.pdf

Key Features

3rd generation of SiC MOSFET technology.
High blocking voltage with low on-resistance.
High speed switching with low capacitances.
Fast intrinsic diode with low reverse recovery (Qrr).
Halogen free, RoHS compliant.
Wide creepage (~7 mm) between drain and source.
Automotive qualified (AEC-Q101) and PPAP capable Drain (TAB) TO-263-7 Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Package Types: TO-263-7 PN’s: E3M0.

Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	E3M0120090J	Silicon Carbide Power MOSFET	Cree
	E3M0120090D	Silicon Carbide Power MOSFET	CREE

More Datasheets from Wolfspeed

Part Number	Description
E3M0160120D	Silicon Carbide Power MOSFET
E3M0160120J2	Silicon Carbide Power MOSFET
E3M0160120K	Silicon Carbide Power MOSFET
E3M0016120K	Silicon Carbide Power MOSFET
E3M0021120J2	Silicon Carbide Power MOSFET
E3M0021120K	Silicon Carbide Power MOSFET
E3M0032120J2	Silicon Carbide Power MOSFET
E3M0032120K	Silicon Carbide Power MOSFET
E3M0040120J2	Silicon Carbide Power MOSFET
E3M0040120K	Silicon Carbide Power MOSFET

E3M0120090J Distributor