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E3M0120090J - Silicon Carbide Power MOSFET

Datasheet Summary

Features

  • 3rd generation of SiC MOSFET technology.
  • High blocking voltage with low On-resistance.
  • High speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant.
  • Wide creepage (~7mm) between drain and source.
  • Automotive qualified (AEC-Q101) and PPAP capable Benefits.
  • Reduce switching losses and minimize gate ringing.
  • High system efficiency.
  • Increased pow.

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Datasheet Details

Part number E3M0120090J
Manufacturer Cree
File Size 0.96 MB
Description Silicon Carbide Power MOSFET
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E3M0120090J Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features • 3rd generation of SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) between drain and source • Automotive qualified (AEC-Q101) and PPAP capable Benefits • Reduce switching losses and minimize gate ringing • High system efficiency • Increased power density • Increased system switching frequency Applications • EV charging • DC/DC converters • SMPS • UPS • Solar PV inverters Package Drain (TAB) Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Part Number E3M0120090J Package TO-263-7 Marking E
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