E3M0120090J
E3M0120090J is Silicon Carbide Power MOSFET manufactured by Cree.
Silicon Carbide Power MOSFET E-Series Automotive
N-Channel Enhancement Mode
Features
- 3rd generation of SiC MOSFET technology
- High blocking voltage with low On-resistance
- High speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant
- Wide creepage (~7mm) between drain and source
- Automotive qualified (AEC-Q101) and PPAP capable Benefits
- Reduce switching losses and minimize gate ringing
- High system efficiency
- Increased power density
- Increased system switching frequency Applications
- EV charging
- DC/DC converters
- SMPS
- UPS
- Solar PV inverters
Package
Drain (TAB)
Gate (Pin...
