E3M0120090D
E3M0120090D is Silicon Carbide Power MOSFET manufactured by Cree.
VDS 900 V
Silicon Carbide Power MOSFET E-Series Automotive
ID @ 25˚C
23 A
RDS(on) 120 mΩ
N-Channel Enhancement Mode
Features
Package
- 3rd generation SiC MOSFET technology
- High blocking voltage with low On-resistance
- High speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant
- Automotive Qualified (AEC-Q101) and PPAP Capable
Benefits
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency
Applications
- Automotive EV battery chargers
- Renewable energy
- High voltage DC/DC converters
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