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E3M0120090D - Silicon Carbide Power MOSFET

Key Features

  • Package.
  • 3rd generation SiC MOSFET technology.
  • High blocking voltage with low On-resistance.
  • High speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant.
  • Automotive Qualified (AEC-Q101) and PPAP Capable Benefits.
  • Higher system efficiency.
  • Reduced cooling requirements.
  • Increased power density.
  • Increased system switching frequ.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VDS 900 V E3M0120090D Silicon Carbide Power MOSFET E-Series Automotive ID @ 25˚C 23 A RDS(on) 120 mΩ N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Automotive Qualified (AEC-Q101) and PPAP Capable Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency Applications • Automotive EV battery chargers • Renewable energy • High voltage DC/DC converters Part Number E3M0120090D Package TO-247-3 Marking E3M0120090 Maximum Ratings (TC = 25 ˚C unless otherwise