E3M0120090D Description
VDS 900 V E3M0120090D Silicon Carbide Power MOSFET E-Series Automotive ID @ 25˚C 23 A RDS(on) 120 mΩ N-Channel Enhancement Mode.
E3M0120090D Key Features
- 3rd generation SiC MOSFET technology
- High blocking voltage with low On-resistance
- High speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant
- Automotive Qualified (AEC-Q101) and PPAP Capable
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency