CRMKGL1010B mosfet equivalent, n-channel power mosfet.
l 100V, 60A
D
RDS(ON) Typ = 9.2mΩ @ VGS = 10V
RDS(ON) Typ = 11.6mΩ @ VGS = 4.5V l Advanced Split Gate Trench Technology
s l Excellent RDS(ON) and Low Gate Charge ic l 1.
including compliance
with all laws, regulations and safety requirements or standards. “Typical” parameters which provid.
Features
l 100V, 60A
D
RDS(ON) Typ = 9.2mΩ @ VGS = 10V
RDS(ON) Typ = 11.6mΩ @ VGS = 4.5V l Advanced Split Gate Trench Technology
s l Excellent RDS(ON) and Low Gate Charge ic l 100% UIS TESTED! n l 100% ΔVds TESTED!
G S
Schematic Diagram
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