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CT2N7002E-R3 - N-Channel MOSFET

CT Micro

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Datasheet Details

Part number	CT2N7002E-R3
Manufacturer	CT Micro
File Size	2.04 MB
Description	N-Channel MOSFET
Datasheet	CT2N7002E-R3-CTMicro.pdf

CT2N7002E-R3 Product details

Description

The CT2N7002E-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

Drain-Source Breakdown Voltage VDSS 60 V.
Drain-Source On-Resistance RDS(ON) 4.15Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.7Ω, at VGS= 5.0V, IDS= 500mA ℃.
Continuous Drain Current at TA=25 ,ID = 500mA.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.
ESD protection.

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Published: May 20, 2020 |