Datasheet Details
| Part number | CT2N7002E-R3 |
|---|---|
| Manufacturer | CT Micro |
| File Size | 2.04 MB |
| Description | N-Channel MOSFET |
| Datasheet |
 CT2N7002E-R3 Datasheet
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General Description
The CT2N7002E-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Key Features
- Drain-Source Breakdown Voltage VDSS 60 V.
- Drain-Source On-Resistance RDS(ON) 4.15Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.7Ω, at VGS= 5.0V, IDS= 500mA ℃.
- Continuous Drain Current at TA=25 ,ID = 500mA.
- Advanced high cell density Trench Technology.
- RoHS Compliance & Halogen Free.
- ESD protection.