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CT3401-R3 Datasheet P-Channel MOSFET

Manufacturer: CT Micro

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Datasheet Details

Part number CT3401-R3
Manufacturer CT Micro
File Size 749.72 KB
Description P-Channel MOSFET
Download CT3401-R3 Download (PDF)

General Description

The CT3401-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for low voltage application.

Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Jun, 2015 CT3401-R3 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current PD Total Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient (t=10s) Test Conditions Ratings -30 ±12 -4.1 -30 1.4 -55 to 150 -55 to 150 Units V V A A W oC oC Notes 1 1 2 Min Typ Max Units Notes - 140 - oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 3 Jun, 2015 CT3401-R3 P-Channel Enhancement MOSFET Electrical Characteristics TA = 25°C (unless otherwise specified) Static Characteristics Symbol Parameters BVDSS Drain-Source Breakdown Voltage IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Test Conditions VGS=0V, ID= - 250µA VDS = -30V, VGS = 0V VGS = ±12V, VDS = 0V Min Typ Max Units Notes -30 - - V - - -1 µA - - ±100 nA On Characteristics Symbol Parameters RDS(ON) Drain-Source On-Resistance VGS(TH) Gate-Source Threshold Voltage Test Conditions VGS = -10V, ID = -4.1A VGS = -4.5V, ID = -4.0A VGS = -2.5V, ID = -1.0A VGS = VDS, ID = -250µA Min Typ Max Units N

Overview

CT3401-R3 P-Channel Enhancement MOSFET.

Key Features

  • Drain-Source Breakdown Voltage VDSS - 30 V.
  • Drain-Source On-Resistance RDS(ON) 53mΩ, at VGS= - 10V, IDS= - 4.1A RDS(ON) 64mΩ, at VGS= - 4.5V, IDS= - 4.0A RDS(ON) 86mΩ, at VGS= - 2.5V, IDS= - 1.0A ℃.
  • Continuous Drain Current at TA=25 ID = - 4.1A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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