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CT3401-R3 Datasheet - CT Micro

P-Channel MOSFET

CT3401-R3 Features

* Drain-Source Breakdown Voltage VDSS - 30 V

* Drain-Source On-Resistance RDS(ON) 53mΩ, at VGS= - 10V, IDS= - 4.1A RDS(ON) 64mΩ, at VGS= - 4.5V, IDS= - 4.0A RDS(ON) 86mΩ, at VGS= - 2.5V, IDS= - 1.0A ℃

* Continuous Drain Current at TA=25 ID = - 4.1A

* Advanced high cell

CT3401-R3 General Description

The CT3401-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for low voltage application. Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Jun, 2015 CT3401-R3 P-Chann.

CT3401-R3 Datasheet (749.72 KB)

Preview of CT3401-R3 PDF

Datasheet Details

Part number:

CT3401-R3

Manufacturer:

CT Micro

File Size:

749.72 KB

Description:

P-channel mosfet.

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CT3401-R3 P-Channel MOSFET CT Micro

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