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CT3401A-R3 - P-Channel MOSFET

Datasheet Summary

Description

The CT3401A-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for low voltage application.

Features

  • Drain-Source Breakdown Voltage VDSS - 30 V.
  • Drain-Source On-Resistance RDS(ON) 33mΩ, at VGS= - 10V, IDS= - 4.2A RDS(ON) 38mΩ, at VGS= - 4.5V, IDS= - 4.0A RDS(ON) 51mΩ, at VGS= - 2.5V, IDS= - 1.0A ℃.
  • Continuous Drain Current at TA=25 ID = - 4.2A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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Datasheet preview – CT3401A-R3

Datasheet Details

Part number CT3401A-R3
Manufacturer CT Micro
File Size 568.54 KB
Description P-Channel MOSFET
Datasheet download datasheet CT3401A-R3 Datasheet
Additional preview pages of the CT3401A-R3 datasheet.

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Full PDF Text Transcription

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CT3401A-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 30 V • Drain-Source On-Resistance RDS(ON) 33mΩ, at VGS= - 10V, IDS= - 4.2A RDS(ON) 38mΩ, at VGS= - 4.5V, IDS= - 4.0A RDS(ON) 51mΩ, at VGS= - 2.5V, IDS= - 1.0A ℃• Continuous Drain Current at TA=25 ID = - 4.2A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • LCD Display inverter • Load Switch Description The CT3401A-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for low voltage application.
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