CT3401A-R3 Datasheet | CT Micro

CT3401A-R3 P-Channel Enhancement MOSFET Features - Drain-Source Breakdown Voltage VDSS - 30 V - Drain-Source On-Resistance RDS(ON) 33mΩ, at VGS= - 10V, IDS= - 4.2A RDS(ON) 38mΩ, at VGS= - 4.5V, IDS= - 4.0A RDS(ON) 51mΩ, at VGS= - 2.5V, IDS= - 1.0A ℃- Continuous Drain Current at TA=25 ID = - 4.2A - Advanced high cell density Trench Technology - Ro HS pliance & Halogen Free Applications - Power Management - LCD Display inverter - Load Switch Description The CT3401A-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for low voltage application. Package Outline Schematic Drain Drain Gate Source Gate Source...