CT3400A-R3 Datasheet | CT Micro

CT3400A-R3 N-Channel Enhancement MOSFET Features - Drain-Source Breakdown Voltage VDSS 30 V - Drain-Source On-Resistance RDS(ON) 23.0mΩ, at VGS= 10V, IDS= 6.0A RDS(ON) 26.0mΩ, at VGS= 4.5V, IDS= 5.0A RDS(ON) 35mΩ, at VGS= 2.5V, IDS= 4.0A ℃- Continuous Drain Current at TA=25 ID = 5.8A - Advanced high cell density Trench Technology - Ro HS pliance & Halogen Free Applications - Power Management - LED Display - DC-DC System - LCD Panel Package Outline Description The CT3400A-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 4 Aug, 2015 CT3400A-R3 N-Channel Enhancement...