CT3400-R3 - N-Channel MOSFET

CT Micro

General Description

The CT3400-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .

Key Features

Drain-Source Breakdown Voltage VDSS 30 V.
Drain-Source On-Resistance RDS(ON) 23.5mΩ, at VGS= 10V, IDS= 6.0A RDS(ON) 26.5mΩ, at VGS= 4.5V, IDS= 5.0A ℃.
Continuous Drain Current at TA=25 ID = 5.8A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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CT3400-R3 n-channel mosfet by CT Micro - Datasheet Preview

Datasheet Details

Part number	CT3400-R3
Manufacturer	CT Micro
File Size	3.06 MB
Description	N-Channel MOSFET
Datasheet	CT3400-R3 Datasheet

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Full PDF Text Transcription (Reference)

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CT3400-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 30 V • Drain-Source On-Resistance RDS(ON) 23.5mΩ, at VGS= 10V, IDS= 6.0A RDS(ON) 26.5mΩ, at VGS= 4.5V, IDS= 5.0A ℃• Continuous Drain Current at TA=25 ID = 5.8A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • LED Display • DC-DC System • LCD Panel Description The CT3400-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 6 Aug.