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CT3401-R3 - P-Channel MOSFET

General Description

The CT3401-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for low voltage application.

Key Features

  • Drain-Source Breakdown Voltage VDSS - 30 V.
  • Drain-Source On-Resistance RDS(ON) 53mΩ, at VGS= - 10V, IDS= - 4.1A RDS(ON) 64mΩ, at VGS= - 4.5V, IDS= - 4.0A RDS(ON) 86mΩ, at VGS= - 2.5V, IDS= - 1.0A ℃.
  • Continuous Drain Current at TA=25 ID = - 4.1A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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Datasheet Details

Part number CT3401-R3
Manufacturer CT Micro
File Size 749.72 KB
Description P-Channel MOSFET
Datasheet download datasheet CT3401-R3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CT3401-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 30 V • Drain-Source On-Resistance RDS(ON) 53mΩ, at VGS= - 10V, IDS= - 4.1A RDS(ON) 64mΩ, at VGS= - 4.5V, IDS= - 4.0A RDS(ON) 86mΩ, at VGS= - 2.5V, IDS= - 1.0A ℃• Continuous Drain Current at TA=25 ID = - 4.1A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • LCD Display inverter • Load Switch Description The CT3401-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for low voltage application.