CTH1606NS-T52
Overview
The CTH1606NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
- Drain-Source Breakdown Voltage VDSS 60V
- Drain-Source On-Resistance RDS(ON) 52m, at VGS= 10V, ID= 15A RDS(ON) 70m, at VGS= 4.5V, ID= 10A
- Continuous Drain Current at TC=25℃ID =16A
- Advanced high cell density Trench Technology
- RoHS Compliance & Halogen Free
