CTH2506NS-T52 Datasheet N-Channel MOSFET

Manufacturer: CT Micro

CTH2506NS-T52 n-channel mosfet by CT Micro - Datasheet Preview

Datasheet Details

Part number	CTH2506NS-T52
Manufacturer	CT Micro
File Size	1.03 MB
Description	N-Channel MOSFET
Download	CTH2506NS-T52 Download (PDF)

General Description

The CTH2506NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application.

Overview

CTH2506NS-T52 N-Channel Enhancement MOSFET.

Key Features

Drain-Source Breakdown Voltage VDSS 60V.
Drain-Source On-Resistance RDS(ON) 27m, at VGS= 10V, ID= 20A RDS(ON) 34m, at VGS= 4.5V, ID= 16A.
Continuous Drain Current at TC=25℃ID =27.6A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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