CTH2506NS-T52
Description
The CTH2506NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
Key Features
- Drain-Source Breakdown Voltage VDSS 60V
- Drain-Source On-Resistance RDS(ON) 27m, at VGS= 10V, ID= 20A RDS(ON) 34m, at VGS= 4.5V, ID= 16A
- Continuous Drain Current at TC=25℃ID =27.6A
- Advanced high cell density Trench Technology
- RoHS pliance & Halogen Free
