CTH2506NS-T52 - N-Channel MOSFET

Product Overview

CT Micro

Datasheet Details

Part number	CTH2506NS-T52
Manufacturer	CT Micro
File Size	1.03 MB
Description	N-Channel MOSFET
Datasheet	CTH2506NS-T52 Datasheet
Additional preview pages of the CTH2506NS-T52 datasheet.

Product details

Description

The CTH2506NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. DC/DC Converter Power Management Load Switch Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Jun

Features

Drain-Source Breakdown Voltage VDSS 60V.
Drain-Source On-Resistance RDS(ON) 27m, at VGS= 10V, ID= 20A RDS(ON) 34m, at VGS= 4.5V, ID= 16A.
Continuous Drain Current at TC=25℃ID =27.6A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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Published: May 20, 2020 |