CTH5002NS-T52 - N-Channel MOSFET

CT Micro

CTH5002NS-T52 Datasheet Preview — Preview of CTH5002NS-T52 PDF

Datasheet Details

Part number	CTH5002NS-T52
Manufacturer	CT Micro
File Size	1.04 MB
Description	N-Channel MOSFET
Datasheet	CTH5002NS-T52-CTMicro.pdf

CTH5002NS-T52 Product details

Description

The CTH5002NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. DC/DC Converter Load Switch LCD Display inverter Power Management Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary &

Features

Drain-Source Breakdown Voltage VDSS 25V.
Drain-Source On-Resistance RDS(ON) 6.5m, at VGS= 10V, ID= 30A RDS(ON) 10m, at VGS= 4.5V, ID= 30A.
Continuous Drain Current at TC=25℃ID =50A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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Published: May 20, 2020 |