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CTL0196PS-R3 - P-Channel MOSFET

General Description

The CTL0196PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Power Management Battery Powered Sy

Key Features

  • Drain-Source Breakdown Voltage VDSS -60 V.
  • Drain-Source On-Resistance RDS(ON) 170mΩ, at VGS= -10V, ID= -1.8A RDS(ON) 200mΩ, at VGS= -4.5V, ID= -1.4A ℃.
  • Continuous Drain Current at TC=25 ID = -1.9A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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Datasheet Details

Part number CTL0196PS-R3
Manufacturer CT Micro
File Size 763.35 KB
Description P-Channel MOSFET
Datasheet download datasheet CTL0196PS-R3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CTL0196PS-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS -60 V • Drain-Source On-Resistance RDS(ON) 170mΩ, at VGS= -10V, ID= -1.8A RDS(ON) 200mΩ, at VGS= -4.5V, ID= -1.4A ℃• Continuous Drain Current at TC=25 ID = -1.9A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Description The CTL0196PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.