CTL0422PS-R3
Overview
The CTL0422PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
- Drain-Source Breakdown Voltage VDSS -20 V
- Drain-Source On-Resistance RDS(ON) 45m, at VGS= -4.5V, ID= -4.0A RDS(ON) 52m, at VGS= -2.5V, ID= -3.0A RDS(ON) 60m, at VGS= -1.8V, ID= -2.0A
- Continuous Drain Current at TC=25℃ID = -4.0A
- Advanced high cell density Trench Technology
- RoHS Compliance & Halogen Free
