3429DE Description
The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
3429DE Key Features
- RDS(ON)( at VGS=-4.5V)
- RDS(ON)( at VGS=-2.5V)
- RDS(ON)( at VGS=-1.8V)
- 20V -30A ＜19 mohm ＜26 mohm ＜45 mohm
- Trench Power LV MOSFET technology
- High density cell design for Low RDS(ON)
- High Speed switching